(China (Mainland))
Product Summary
The S29GL064A90FFIS30 is a Mode Flash. The S29GL064A90FFIS30 is 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A90FFIS30 is a 64 Mb, organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL064A90FFIS30 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL064A90FFIS30 absolute maximum ratings: (1)Storage Temperature, Plastic Packages : –65℃ to +150℃; (2)Ambient Temperature with Power Applied : –65℃ to +125℃; (3)Voltage with Respect to Ground VCC : –0.5 V to +4.0 V; (4)Voltage with Respect to Ground A9, OE#, ACC and RESET# : –0.5 V to +12.5 V; (5)Voltage with Respect to Ground All other pins : –0.5 V to VCC+0.5 V; (6)Output Short Circuit Current : 200 mA.
Features
S29GL064A90FFIS30 features: (1)Program Suspend & Resume: read other sectors before programming operation is completed; (2)Erase Suspend & Resume: read/program other sectors before an erase operation is completed; (3)Data# polling & toggle bits provide status; (4)CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices; (5)Unlock Bypass Program command reduces overall multiple-word programming time; (6)Sector Group Protection: hardware-level method of preventing write operations within a sector group; (7)Temporary Sector Unprotect: VID-level method of charging code in locked sectors; (8)WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models; (9)Hardware reset input (RESET#) resets device; (10)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
